| PART |
Description |
Maker |
| KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61
16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM - 256Mb
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
| HYMD532M646A6-H HYMD532M646A6-J HYMD532M646A6-K HY |
DDR SDRAM - SO DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.7 ns, ZMA200
Unbuffered DDR SO-DIMM
|
HYNIX SEMICONDUCTOR INC
|
| HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT- |
DDR SDRAM - 256Mb
256M-P DDR SDRAM
IC,SDRAM,DDR,4X8MX8,CMOS,TSSOP,66PIN,PLASTIC
|
Hynix Semiconductor
http://
|
| HM5425801B |
256M SSTL_2 interface DDR SDRAM(256M SSTL_2接口 DDR 同步DRAM) 256M DDR SDRAM的接口SSTL_256M SSTL_2接口的DDR同步DRAM）的
|
Hitachi,Ltd.
|
| EDD1216AASE EDD1216AASE-7A-E EDD1216AASE-6B-E |
ER 3C 3#8 SKT PLUG LINE 8M X 16 DDR DRAM, 0.7 ns, PBGA60
128M bits DDR SDRAM (8M words x 16 bits) 8M X 16 DDR DRAM, 0.75 ns, PBGA60
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| EBD52UC8AMFA-6B EBD52UC8AMFA |
512MB Unbuffered DDR SDRAM DIMM
DDR DRAM MODULE, DMA184
|
ELPIDA MEMORY INC
|
| HYMD216M726AL6-K HYMD216M726AL6-H HYMD216M726AL6-J |
Unbuffered DDR SO-DIMM
16M X 72 DDR DRAM MODULE, 0.7 ns, DMA200
|
HYNIX SEMICONDUCTOR INC
|
| AS4DDR16M72-8_ET AS4DDR16M72-8_IT AS4DDR16M72-8_XT |
16M X 72 DDR DRAM, 0.8 ns, PBGA219
16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
| HYMD2166466 HYMD216646L6 HYMD2166466-H |
16Mx64|2.5V|K/H/L|x4|DDR SDRAM - Unbuffered DIMM 128MB
16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
HYNIX SEMICONDUCTOR INC
|
